SHENZHEN KANA TECHNOLOGY CO., LTD

Study on through hole etching technology on the back of SiC based chip

By improving the fixture of the inductively coupled plasma (ICP) device, the heat conduction efficiency of the back helium was improved, the temperature difference between the bottom electrode base and the wafer surface was reduced, and the cooling effect was improved. The effects of RF power, ICP power, bottom electrode base temperature, chamber pressure and other parameters on the etching rate, selection ratio, inclination Angle and side wall smoothness of the through-hole on the back of SiC w

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